用于传感应用的超薄SOI谐振器的性能外文翻译资料

 2021-11-05 09:11

英语原文共 15 页

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用于传感应用的超薄SOI谐振器的性能

Article in Optics Express · June 2014

DOI: 10.1364/OE.22.014166

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  1. 位作者, 包括:

Sahba Talebi Fard Valentina Donzella

University of British Columbia - Vancouver The University of Warwick

25 PUBLICATIONS 425 CITATIONS 35 PUBLICATIONS 399 CITATIONS

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Shon Schmidt Samantha Grist

University of Washington Seattle University of British Columbia - Vancouver

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用于传感应用的超薄SOI谐振器的性能

Sahba Talebi Fard,1,lowast; Valentina Donzella,1 Shon A. Schmidt,2

Jonas Flueckiger,1 Samantha M. Grist,1 Pouria TalebiFard,3

Yichen Wu,1 Rick J. Bojko,4 Ezra Kwok,5 Nicolas A. F. Jaeger,1 Daniel M. Ratner,2 and Lukas Chrostowski1

  1. Department of Electrical and Computer Engineering, The University of British Columbia

2332 Main Mall, Vancouver, BC, V6T 1Z4 Canada

  1. Department of bioengineering, The University of Washington

1705 NE Pacific Street, Seattle, WA 98195 USA

  1. Department of Computer Science, The University of British Columbia

2366 Main Mall, Vancouver, BC, V6T 1Z4 Canada

  1. Nanofabrication Facility, University of Washington Box 352143, Seattle, WA 98195-2143USA
  2. Department of Chemical and Biological Engineering, The University of British Columbia

2360 East Mall, Vancouver, BC, V6T 1Z3 Canada

lowast; Corresponding Author: Sahba TalebiFard lowast;sahbat@ece.ubc.ca

摘要:这项工作展示了超薄光学环谐振器的仿真和实验结果,与传统的基于绝缘体上硅(SOI)的谐振器传感器相比,具有更大的消逝场(EF)穿透深度,因此具有更大的灵敏度。对于感测应用而言,对包层介质的折射率的变化具有更高的灵敏度是合乎需要的,因为感兴趣的相互作用发生在该区域中。使用超薄波导(lt;100nm厚)有望增强体积和表面感测的灵敏度,因为EF增加了对包层的穿透。在这项工作中,提出了超薄谐振器传感器的设计和表征,在多项目晶圆服务的约束下

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