英语原文共 15 页
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用于传感应用的超薄SOI谐振器的性能
Article in Optics Express · June 2014
DOI: 10.1364/OE.22.014166
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- 位作者, 包括:
Sahba Talebi Fard Valentina Donzella
University of British Columbia - Vancouver The University of Warwick
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University of Washington Seattle University of British Columbia - Vancouver
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用于传感应用的超薄SOI谐振器的性能
Sahba Talebi Fard,1,lowast; Valentina Donzella,1 Shon A. Schmidt,2
Jonas Flueckiger,1 Samantha M. Grist,1 Pouria TalebiFard,3
Yichen Wu,1 Rick J. Bojko,4 Ezra Kwok,5 Nicolas A. F. Jaeger,1 Daniel M. Ratner,2 and Lukas Chrostowski1
- Department of Electrical and Computer Engineering, The University of British Columbia
2332 Main Mall, Vancouver, BC, V6T 1Z4 Canada
- Department of bioengineering, The University of Washington
1705 NE Pacific Street, Seattle, WA 98195 USA
- Department of Computer Science, The University of British Columbia
2366 Main Mall, Vancouver, BC, V6T 1Z4 Canada
- Nanofabrication Facility, University of Washington Box 352143, Seattle, WA 98195-2143USA
- Department of Chemical and Biological Engineering, The University of British Columbia
2360 East Mall, Vancouver, BC, V6T 1Z3 Canada
lowast; Corresponding Author: Sahba TalebiFard lowast;sahbat@ece.ubc.ca
摘要:这项工作展示了超薄光学环谐振器的仿真和实验结果,与传统的基于绝缘体上硅(SOI)的谐振器传感器相比,具有更大的消逝场(EF)穿透深度,因此具有更大的灵敏度。对于感测应用而言,对包层介质的折射率的变化具有更高的灵敏度是合乎需要的,因为感兴趣的相互作用发生在该区域中。使用超薄波导(lt;100nm厚)有望增强体积和表面感测的灵敏度,因为EF增加了对包层的穿透。在这项工作中,提出了超薄谐振器传感器的设计和表征,在多项目晶圆服务的约束下
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